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MJE13003 Power Switch Transistor NPN SMD SOT-252

72.00

Product Category: Bipolar Transistors – BJT
Mounting Style: SOT-252
Package/Case: SOT-252
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 400 V
Collector- Base Voltage VCBO: 100 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.5 V
Maximum DC Collector Current: 1.5 A
Pd – Power Dissipation: 1.4 W
Gain Bandwidth Product fT: 3 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 1.5 A
DC Collector/Base Gain hFE Min: 8
Product Type: BJTs – Bipolar Transistors
Subcategory: Transistors

These Power 2 A, 400 V NPN Bipolar Power Transistor is designed for high voltage power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
Features:

Reverse Biased SOA with Inductive Loads @ TC = 100? C
Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100 ° C
tc @ 1 A, 100 ° C is 290 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information.
Pb-Free Package is Available
Technical Documentation & Design

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