IRF1010E is an n-channel enhancement MOSFET designed for high speed switching applications. It also has low turn ON resistance. Like any other MOSFET the IRF1010E is voltage controlled device and MOSFET state is decided by GATE voltage.
IRF1010E Pin Configuration
It has three pins namely GATE, DRAIN and SOURCE. The pin configuration of IRF1010E is given below.
Pin Number
Pin Name
Description
3
SOURCE
Normally connected to GROUND
2
DRAIN
Normally connected to LOAD
1
GATE
Normally used as TRIGGER to turn ON the MOSFET.
Features of IRF1010E:
Advanced process technology
Fully avalanche rated
Fast switching
Fifth generation HEXFET
Maximum voltage across DRAIN and SOURCE: 60V
Maximum continuous current allowed trough DRAIN: 81A
Maximum pulsed DRAIN current: 330A
Maximum voltage across GATE and SOURCE:20 V
Maximum operating Temperature: 175ºC
Maximum power dissipation: 170Watt
Note: Complete technical information can be found in the IRF1010E Datasheet linked at the bottom of this page.
Applications:
When you want a high speed SWITCHING device for MEDIUM POWER LOADS. As mentioned above IRF1010E is specially designed for high speed switching of medium power loads so it is fairly popular in those areas.
When you want low drop switching device. The MOSFET has very low turn ON resistance leading to very low drop during ON condition, which is a must condition in some applications.
With low drop the MOSFET power loss will be less. With less power loss the efficiency of the system will be more. So the MOSFET is preferred for high efficiency applications.
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